S11154-201CT_15 Datasheet, PDF (4/8 Pages) Hamamatsu Corporation – Photo IC diode

Photo IC diode
S11154-201CT
Dark current vs. ambient temperature
1 μA
(Typ. Ta=25 °C, VR=5 V)
100 nA
10 nA
1 nA
100 pA
Directivity
(Typ. Ta=25 °C, tungsten lamp)
30°
20°
10°
0°
100
10°
20°
30°
40°
80
40°
50°
60
60°
50°
60°
70°
40
70°
80°
20
80°
90°
0
90°
100 80 60 40 20 0 20 40 60 80 100
Relative sensitivity (%)
KPICB0145EA
10 pA
0
25
50
75
Ambient temperature (°C)
100
KPICB0146EA
Block diagram
Photodiode
for signal offset
Cathode
Photodiode
for signal detection
The drawing surrounded
by the dotted line shows
a schematic diagram of
the photo IC.
Current amp
(approx. 30000 times)
Internal protection
resistance
(approx. 150 Ω)
Reverse bias
power supply
Anode
Vout
CL
RL
The photo IC diode must be reverse-biased so that a positive
potential is applied to the cathode.
To eliminate high-frequency components, we recommend plac-
ing a load capacitance CL in parallel with load resistance RL as a
low-pass filter.
1
Cut-off frequency fc
2π CL RL
KPICC0132EA
4