S11154-201CT_15 Datasheet, PDF (1/8 Pages) Hamamatsu Corporation – Photo IC diode

Photo IC diode
S11154-201CT
Reduced color temperature errors
The S11154-201CT is a photo IC diode with spectral response characteristics that closely resemble human eye sensitivity. Two
active areas are formed on the same chip, and the outputs of the two active areas are subtracted from each other by the cur-
rent amplifier circuit, in order to have sensitivity almost only in the visible range and reduce the color temperature errors.
Features
Spectral response close to human eye sensitivity
Reduced color temperature error
Lower output-current variation compared with
phototransistors
Excellent linearity
Low output deviation by different color temperature
light source
Suitable for lead-free reflow (RoHS compliance)
Applications
Energy-saving sensor for large-screen TVs, etc.
Various types of light level measurement
Absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
Condition
Specification
Unit
Reverse voltage
VR
-0.5 to +12
V
Photocurrent
IL
5
mA
Forward current
Power dissipation*¹
Operating temperature
Storage temperature
Reflow soldering conditions*³
IF
5
mA
P
150
mW
Topr No dew condensation*²
-30 to +80
°C
Tstg No dew condensation*²
-40 to +85
°C
Tsol
Peak temperature 260 °C max., two times (see P.7)
-
*1: Power dissipation decreases at a rate of 2 mW/°C above Ta=25 °C.
*2: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew
condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and
reliability.
*3: JEDEC level 3
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Electrical and optical characteristics (Ta=25 °C)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Spectral response range
λ
-
480 to 640
-
nm
Peak sensitivity wavelength
λp
-
580
-
nm
Dark current
ID
VR=5 V
-
1.0
50
nA
Photocurrent
IL
VR=5 V, 2856 K
100 lx
70
-
150
μA
Rise time*⁴
Fall time*⁴
tr
10 to 90 %, VR=7.5 V
-
6.0
-
ms
tf
RL=10 kΩ, λ=560 nm
-
2.5
-
ms
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