G9211_05 Datasheet, PDF (4/4 Pages) Hamamatsu Corporation – InGaAs linear image sensor

InGaAs linear image sensor G9211 to G9214/G9205 to G9208 series
s Dimensional outline (unit: mm)
63.5 ± 0.15
53.3 ± 0.15
38.1 ± 0.15
35.6 ± 0.15
28
15
27.2 ± 0.15
12
14
INDEX MARK
(28 ×) 2.54
(28 ×) 0.46
s Pin connection (top view)
256 PIXELS
AB
ONE-STAGE TE-COOLED 6.15 3.6
TWO-STAGE TE-COOLED 7.25 4.5
512 PIXELS
KMIRA0011EA
TE +
THERM
THERM
CASE
Cf SELECT
RESET
TE -
AD-TRIG
Vdd
Vss
INP
CLK
RESET-EVEN
TE +
AD-TRIG-EVEN
THERM
THERM
CASE
CLK-EVEN
Vref
VIDEO
VIDEO-EVEN
Cf SELECT
RESET-ODD
TE -
AD-TRIG-ODD
Vdd
Vss
INP
CLK-ODD
Vref
VIDEO-ODD
KMIRC0013EA
Terminal name
CLK
RESET
Vdd
Vss
INP
Cf SELECT
CASE
THERM
TE+, TE-
AD-TRIG
VIDEO
Vref
Input/Output
Input
(CMOS logic compatible)
Input
(CMOS logic compatible)
Input
-
Input
Input
-
-
-
Output
Output
Input
Function and recommended connection
Clock pulse for operating the CMOS shift register
Reset pulse for initializing the feedback capacitance in the charge amplifier
formed on the CMOS chip. The width of the reset pulse is integration time.
Supply voltage for operating the signal processing circuit on the CMOS chip.
Ground for the signal processing circuit on the CMOS chip.
Reset voltage for the charge amplifier array on the CMOS chip.
Voltage that determines the feedback capacitance (Cf) on the CMOS chip.
Cf=10 pF at 0 V, and Cf=0.5 pF at 5 V.
This terminal is electrically connected to the package.
Thermistor for monitoring temperature inside the package.
Power supply terminal for the thermoelectric cooler that cools the photodiode
array. No connection for room temperature operation type.
Digital signal for AD conversion; positive polarity
Analog video signal; positive polarity
Reset voltage for the offset compensation circuit at the CMOS chip
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2005 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: [phone], Fax: [phone], http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: [phone], Fax: [phone]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: [phone], Fax: [phone]
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: [phone], Fax: [phone]
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: [phone], Fax: [phone]
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: [phone], Fax: [phone]
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: [phone], Fax: [phone]
Cat. No. KMIR1011E05
4
May 2005 DN