G9211_05 Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – InGaAs linear image sensor

IMAGE SENSOR
InGaAs linear image sensor
G9211 to G9214/G9205 to G9208 series
Near infrared image sensors (0.9 to 1.67 µm / 2.55 µm)
G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry.
These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an offset compensation circuit, a shift register and a
timing generator formed on a CMOS chip. The charge amplifier array is made up of CMOS transistors connected to each pixel of the InGaAs
photodiode array. Signals from each pixel are read out in charge integration mode to achieve high sensitivity and stable operation in the near
infrared spectral range. The package is hermetically sealed for high reliability.
Signal processing circuits on the CMOS chip allow selecting a feedback capacitance (Cf) of 10 pF or 0.5 pF by using an external voltage input.
The image sensor operates over a wide dynamic range when Cf=10 pF and delivers high gain when Cf=0.5 pF.
Features
l Wide dynamic range
l Low noise and low dark current
l Selectable gain
l Anti-saturation circuit
l CDS circuit *¹
l Offset compensation circuit
l Simple operation (by built-in timing generator) *²
l High resolution: 25 µm pitch (512 ch)
l Low cross-talk
l 256 ch: 1 video line
512 ch: 2 video lines
s Selection guide
Type No.
Cooling
Number of
pixels
G 9 2 11 -2 5 6 S
256
G9212-512S
One-stage
512
G9213-256S
TE-cooled
256
G9214-512S
512
G9205-256W
G9206-256W
Two-stage
G9207-256W
TE-cooled
256
G9208-256W
Applications
l Near infrared multichannel spectrophotometry
l Radiation thermometry
l Non-destructive inspection
Related products
l InGaAs multichannel detector head C8061-01, C8062-01
l Multichannel detector head controller C7557
Pixel pitch
(µm)
50
25
50
25
50
Pixel size
[µm (H) × µm (V)]
50 × 250
25 × 250
50 × 500
25 × 500
50 × 250
Spectral
response range
(µm)
0.9 to 1.67 (-10 ° C)
0.9 to 1.85 (-20 ° C)
0.9 to 2.05 (-20 ° C)
0.9 to 2.25 (-20 ° C)
0.9 to 2.55 (-20 ° C)
Defective
pixel
1 % Max. *³
5 % Max.
*1: CDS (Correlated Double Sampling) circuit
A major source of noise in charge amplifiers is the reset noise gen-
erated when the integration capacitance is reset. A CDS circuit greatly
reduces this reset noise by holding the signal immediately after re-
set to find the noise differential.
*2: Timing generator
Different signal timings must be properly set in order to operate a
shift register. In conventional image sensor operation, external PLDs
(Programmable Logic Devices) are used to input the required timing
signals. However, G9211 to G9214/G9205 to G9208 series image
sensors internally generate all timing signals on the CMOS chip just
by supplying CLK and RESET pulses. This makes it simple to set the
timings.
*3: Percentage of defective pixels
If your application requires sensors with no defective pixels, please
select G9201 series.
s Spectral response
1.5
T=25 ˚C
T= -10 ˚C
T= -20 ˚C
G9206-256W
1.0 _{G9211 TO}
G9214 SERIES
G9205-256W
0.5
(Typ.)
G9207-256W
G9208-256W
0
0.5
1.0
1.5
2.0
2.5
3.0
WAVELENGTH (µm)
KMIRB0022EB
1