G1735 Datasheet, PDF (4/4 Pages) Hamamatsu Corporation – GaAsP photodiode

GaAsP photodiode Diffusion type
➄ G1740
10.1 ± 0.1
ACTIVE AREA
PHOTOSENSITIVE
SURFACE
0.5
LEAD
ANODE
TERMINAL MARK
9.2 ± 0.3
7.4 ± 0.2
Coating resin may extend a maximum
of 0.1 mm beyond the upper surface
of the package.
KGPDA0010EA
➅ G3297
5.4 ± 0.2
4.65 ± 0.1
PHOTOSENSITIVE
SURFACE
0.45
LEAD
2.54 ± 0.2
CONNECTED
TO CASE
KGPDA0009EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: [phone], Fax: [phone], http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: [phone], Fax: [phone]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: [phone], Fax: [phone]
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: [phone], Fax: [phone]
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: [phone], Fax: [phone]
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: [phone], Fax: [phone]
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: [phone], Fax: [phone]
Cat. No. KGPD1003E01
Apr. 2001 DN