G1735 Datasheet, PDF (2/4 Pages) Hamamatsu Corporation – GaAsP photodiode

sSpectral response
0.5
(Typ. Ta=25 ˚C)
0.4
0.3
0.2
0.1
0
200
400
600
WAVELENGTH (nm)
800
KGPDB0024EA
sRise time vs. load resistance
10 ms
(Typ. Ta=25 ˚C, VR=0 V)
1 ms
100 µs
G1737, G1740
G1736
10 µs
1 µs
G1735, G1738
G3297
100 ns₁₀₂
10³
10⁴
10⁵
10⁶
LOAD RESISTANCE (Ω)
KGPDB0026EA
sShunt resistance vs. ambient temperature
10 TΩ
(Typ. VR=10 mV)
1 TΩ
100 GΩ
G1735, G1738, G3297
G1736
10 GΩ
1 GΩ
G1737, G1740
100 MΩ
10 MΩ
-20
0
20
40
60
AMBIENT TEMPERATURE (˚C)
80
KGPDB0028EA
GaAsP photodiode Diffusion type
sPhoto sensitivity temperature characteristic
(Typ.)
+1.5
+1.0
+0.5
0
-0.5
200
400
600
WAVELENGTH (nm)
800
KGPDB0025EA
sDark current vs. reverse voltage
1 nA
(Typ. Ta=25 ˚C)
100 pA
10 pA
G1737, G1740
G1736
1 pA
100 fA
0.001
G1735, G1738, G3297
0.01
0.1
1
REVERSE VOLTAGE (V)
10
KGPDB0027EA
sShort circuit current linearity
(Typ. Ta=25 ˚C, A light source fully illuminated)
10⁰
10^-2
RL=100 Ω
10^-4
10^-6
10^-8
10^-10
10^-12
10^-14
DEPENDENT ON NEP
10^-1₁⁶_{0-16 10-14 10-12 10-10 10-8 10-6 10-4 10-2 100}
INCIDENT LIGHT LEVEL (lx)
KGPDB0008EA