S9269_15 Datasheet, PDF (3/4 Pages) Hamamatsu Corporation – Si photodiode with preamp

Si photodiode with preamp
Application circuit example
V+
Rf=1 GΩ
Cf=5 pF
S9269, S9270
PKG
-
PHOTODIODE
O
+
G
V-
KSPDC0050EA
Dimensional outline (unit: mm, tolerance unless otherwise noted: ±0.2)
S9269
S9270
Active area
5.8 × 5.8
10.1 ± 0.1
(Ceramic)
Y
16.5 ± 0.2
(Ceramic)
Y
X
X
Resin
Ceramic
PWB
Photosensitive
surface
(4 ×) 0.45
Cu-Zn ALLOY
(4 ×)( 1.0)
Solder
7.62
5.7 1.8
7.4 ± 0.1
10.0 (PWB)
Active area position accuracy
versus package center
-0.165 ≤ X ≤ +0.335
-0.25 ≤ Y ≤ +0.25
Resin potting may extend a
maximum of 0.1 mm above the
upper surface of the package.
GND
Vcc-
OUT
Vcc+
KSPDA0160EB
Active area
10 × 10
Resin
Ceramic
PWB
12.5
Photosensitive
surface
Solder
(4 ×) 0.45
Cu-Zn ALLOY
(4 ×)( 1.0)
12.7
2.75 10.8 2.25
12.5 ± 0.2 0.5
16.3 (PWB)
Active area position accuracy
versus package center
-0.3 ≤ X, Y ≤ +0.3
Resin potting may extend a
maximum of 0.1 mm above the
upper surface of the package.
GND
Vcc-
OUT
Vcc+
KSPDA0161EB
3