S9269_15 Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – Si photodiode with preamp

Si photodiode with preamp
S9269
S9270
Photodiode and preamp integrated with feed-
back resistance and capacitance
S9269 and S9270 are low-noise photosensors consisting of a Si photodiode, op amp, and feedback resistance and capaci-
tance, all integrated into same package with a surface size equal to our standard ceramic packages. These photosensors
are ideal for a wide range of photometric applications including analytical equipment and measurement equipment. The
active area of the photodiode is internally connected to the GND terminal making it highly resistant to EMC noise. Combina-
tions with various photodiodes such as UV sensitivity enhanced type, IR sensitivity suppressed type and IR sensitivity en-
hanced type are also available. (Custom order products)
Features
Si photodiode for visible to near IR Si precision photometry
Small package
S9269: 10.1 × 8.9 × 40 ^t mm
S9270: 16.5 × 15.0 × 4.15 ^t mm
Active area
S9269: 5.8 × 5.8 mm
S9270: 10 × 10 mm
FET input operational amplifier with low power dissipation
Built-in Rf=1 GΩ, Cf=5 pF
Low noise and NEP
Applications
Precision photometry
General-purpose optical measurement
Absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
Value
Unit
Supply voltage (op amp)
Vcc
±20
V
Power dissipation
P
500
mW
Operating temperature
Topr
-20 to +60
°C
Storage temperature
Tstg
-20 to +80
°C
Note: Absolute maximum ratings are the values that must not be exceeded at any time. If even one of the absolute maximum ratings
is exceeded even for a moment, the product quality may be impaired. Always be sure to use the product within the absolute
maximum ratings.
Electrical and optical characteristics (Ta=25 °C, Vcc=±15 V, RL=1 MΩ)
Parameter
Symbol
Condition
S9269
Min.
Typ.
Max.
Min.
Spectral response range
λ
- 340 to 1100 -
-
Peak sensitivity wavelength λp
Feedback resistance (built-in) *
Rf
Feedback capacitance (built-in) *
Cf
-
960
-
-
-
1
-
-
-
5
-
-
Photo sensitivity
S
λ=λp
0.5
0.62
-
0.5
Output noise voltage
Vn
Dark state, f=10 Hz
Dark state, f=20 Hz
-
-
7.3
6.5
-
-
-
-
Noise equivalent power
NEP
λ=λp, f=10 Hz
λ=λp, f=20 Hz
-
12
-
-
-
12
-
-
Output offset voltage
Vos Dark state
-
±4
-
-
Cut-off frequency
fc -3 dB
-
32
-
-
Output voltage swing
Vo RL=10 kΩ
-
13
-
-
Supply current
Icc Dark state
-
0.3
0.6
-
* Custom devices available with different Rf, Cf, etc.
S9270
Typ.
340 to 1100
960
1
5
0.62
9.7
9.1
16
17
±4
32
13
0.3
Max.
-
-
-
-
-
-
-
-
-
-
-
-
0.6
Unit
nm
nm
GΩ
pF
V/nW
μVrms/Hz^1/2
fW/Hz^1/2
mV
Hz
V
mA
www.hamamatsu.com
1