S9269 Datasheet, PDF (3/3 Pages) Hamamatsu Corporation – Photodiode and preamp integrated with feedback resistance and capacitance

Si photodioe with preamp S9269, S9270
s Dimensional outlines (unit: mm, tolerance unless otherwise noted: ±0.2)
➀ S9269
➁ S9270
ACTIVE AREA
(5.83 × 5.83)
10.1 ± 0.1
(CERAMIC)
Y
X
16.5 ± 0.2
(CERAMIC)
Y
X
CERAMIC
PWB
(4 ×) 0.45
Cu-Zn ALLOY
(4 ×)( 1.0)
PHOTOSENSITIVE
SURFACE
SOLDER
7.62
5.7 1.8
7.4 ± 0.1
10.0 (PWB)
Active area position accuracy
versus package center
-0.165 ≤ X ≤ +0.335
-0.25 ≤ Y ≤ +0.25
GND
Vcc-
OUT
Vcc+
KSPDA0160EA
ACTIVE AREA
(10 × 10)
CERAMIC
PWB
12.5
PHOTOSENSITIVE
SURFACE
SOLDER
(4 ×) 0.45
Cu-Zn ALLOY
(4 ×)( 1.0)
12.7
Active area position accuracy
versus package center
-0.3 ≤ X, Y ≤ +0.3
2.75 10.8 2.25
12.5 ± 0.2 0.5
16.3 (PWB)
GND
Vcc-
OUT
Vcc+
KSPDA0161EA
Precautions for use
q ESD
S9269, S9270 may be damaged or their performance may deteriorate by such factors as electro static discharge from the
human body, surge voltages from measurement equipment, leakage voltages from soldering irons and packing materials,
etc. As a countermeasure against electro static discharge, the device, operator, work place and measuring jigs must all be set
at the same potential. The following precautions must be observed during use:
· To protect the device from electro static discharge which accumulate on the operator or the operator's clothes, use a wrist
strap or similar tools to ground the operator's body via a high impedance resistor (1 MΩ).
· A semiconductive sheet (1 MΩ to 100 MΩ) should be laid on both the work table and the floor in the work area.
· When soldering, use an electrically grounded soldering iron with an isolation resistance of more than 10 MΩ.
· For containers and packing, use of a conductive material or aluminum foil is effective. When using an antistatic material, use
one with a resistance of 0.1 MΩ/cm² to 1 GΩ/cm^2.
q Wiring
If electric current or voltage is applied in reverse polarity to an electronic device such as a preamplifier, this can degrade
device performance or destroy the device. Always check the wiring and dimensional outline to avoid misconnection.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: [phone], Fax: [phone], http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: [phone], Fax: [phone]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: [phone], Fax: [phone]
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: [phone], Fax: [phone]
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: [phone], Fax: [phone]
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: [phone], Fax: [phone]
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: [phone], Fax: [phone]
Cat. No. KSPD1066E01
Dec. 2004 DN
3