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S9269 Datasheet, PDF (1/3 Pages) Hamamatsu Corporation – Photodiode and preamp integrated with feedback resistance and capacitance
PHOTODIODE
Si photodiode with preamp
S9269, S9270
Photodiode and preamp integrated with feedback resistance and capacitance
S9269 and S9270 are low-noise photosensors consisting of a Si photodiode, op amp, and feedback resistance and capacitance, all
integrated into a ceramic package with a surface size equal to our standard ceramic packages. These photosensors are ideal for a wide
range of photometric applications including analytical equipment and measurement equipment. The active area of the photodiode is
internally connected to the GND terminal making it highly resistant to EMC noise. Combinations with various photodiodes such as UV
sensitivity enhanced type, IR sensitivity suppressed type and IR sensitivity enhanced type are also available. (Custom order products)
Features
l Si photodiode for visible to near IR Si precision photometry
l Small package
S9269: 10.1 × 8.9 × 40 t mm
S9270: 16.5 × 15.0 × 4.15 t mm
l Active area
S9269: 5.8 × 5.8 mm
S9270: 10 × 10 mm
l FET input operational amplifier with low power dissipation
l Built-in Rf=1 GΩ, Cf=5 pF
l Low noise and NEP
Applications
l Precision photometry
l General-purpose optical measurement
s Absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
Supply voltage (op amp)
Vcc
Power dissipation
P
Operating temperature
Topr
Storage temperature
Tstg
Value
±20
500
-20 to +60
-20 to +80
s Electrical and optical characteristics (Ta=25 °C, Vcc=±15 V, RL=1 MΩ)
Parameter
Symbol
Condition
S9269
Min. Typ. Max.
Spectral response range
λ
-
320 to
1100
-
Peak sensitivity wavelength
λp
-
960
-
F e e d back resistance (built-in) * Rf
-
1
-
F e e d back cap acitance (built-in) * Cf
-
5
-
Photo sensitivity
S λ=λp
0.5 0.62
-
Output noise voltage
Vn
Dark state, f=10 Hz
Dark state, f=20 Hz
-
-
7.3
6.5
-
-
Noise equivalent power
NEP
λ=λp, f=10 Hz
λ=λp, f=20 Hz
-
12
-
-
12
-
Output offset voltage
Vos Dark state
-
±4
-
Cut-off frequency
fc -3 dB
-
32
-
Output voltage swing
Vo RL=10 kΩ
-
13
-
Supply current
Icc Dark state
-
0.3 0.6
* Custom devices available with different Rf, Cf, etc.
Unit
V
mW
°C
°C
S9270
Min. Typ. Max.
Unit
-
320 to
1100
-
nm
-
960
-
nm
-
1
-
GΩ
-
5
-
pF
0.5 0.62
-
V/nW
-
-
9.7
9.1
-
-
µVrms/Hz1/2
-
-
16
17
-
-
fW/Hz1/2
-
±4
-
mV
-
32
-
Hz
-
13
-
V
-
0.3 0.6
mA
1