S8986 Datasheet, PDF (3/7 Pages) Hamamatsu Corporation – CCD area image sensor Front-illuminated FFT-CCDs for X-ray imaging

CCD area image sensor S8986, S10128
s Electrical and optical characteristics (Ta=25 °C, unless otherwise noted, VOD=15 V)
Parameter
Symbol
Remark
Min.
Typ.
Max.
Vertical
100
200
-
Full well capacity
Horizontal
Fw
-
300
-
Summing
-
600
-
CCD node sensitivity
Sv
*⁵
1.0
1.4
-
Dark current (MPP mode)
DS
*⁶
-
250
2,500
Readout noise
Nr
*⁷
-
60
-
Dynamic range
DR
*⁸
-
3,333
-
X-ray response non-uniformity
XRNU
*^9, *¹⁰
-
±10
±30
Point
White spots
Blemish *¹¹
defects *¹² Black spots
Cluster defects
-
*¹³
-
-
20
-
-
20
-
-
3
Column defects
*¹⁴
-
-
1
X-ray resolution
∆R
*⁹
8
10
-
*5: VOD=15 V, RL(load resistance of emitter follower)=1 kΩ.
*6: Dark signal doubles for every 5 to 7 °C.
*7: -40 °C, operating frequency is 1 MHz.
*8: Dynamic range = Full well capacity / Readout noise
*9: X-ray irradiation of 60 kVp, measured at half of the full well capacity.
*10: XRNU (%) = Noise / Signal × 100
Noise: Fixed pattern noise (peak to peak)
In the range that excludes 5 pixels from edges to the center at every position.
*11: Refer to “Characteristics and use of FFT-CCD area image sensor” of technical information.
*12: White spots > 10 times of Max. Dark signal (2500 e^-/pixel/s).
Black spots > 50 % reduction in response relative to adjacent pixels, measured at half of the full well capacity.
*13: continuous 2 to 9 point defects.
*14: continuous > 10 point defects.
s Device structure
Unit
ke^-
µV/e^-
e^-/pixel/s
e^-rms
-
%
-
Lp/mm
P1V’
P2V’
TG’
SS
OS
OD
RD
RG’
OG
SG’
P1H’
P2H’
s Pixel format
Blank
2
......
......
X-RAY IRRADIATION
MONITORING PHOTODIODE
PD
KMPDC0220EA
Optical
black
2
← Left
Isolation
1
Horizontal Direction
Effective
1700
→ Right
Isolation
1
Top ← Vertical direction → Bottom
Isolation
Effective
Isolation
1
1200
1
Optical
black
0
Blank
2
3