S11519_15 Datasheet, PDF (3/4 Pages) Hamamatsu Corporation – Enhanced near IR sensitivity, using a MEMS technology

Si APD
S11519 series
Gain vs. reverse voltage
10⁴
20 °C
0 °C
10³
-20 °C
10²
10¹
(Typ.)
40 °C
60 °C
10⁰
100
200
300
Reverse voltage (V)
400
KAPDB0185EA
Dark current vs. reverse voltage
1 µA
(Typ. Ta=25 °C)
100 nA
10 nA
S11519-30
1 nA
100 pA
10 pA
100
S11519-10
200
300
Reverse voltage (V)
400
KAPDB0190EA
Terminal capacitance vs. reverse voltage
(Typ. Ta=25 °C, f=100 kHz)
1 nF
100 pF
10 pF
1 pF
S11519-30
S11519-10
100 fF
0
100
200
300
Reverse voltage (V)
400
KAPDB0191EA
3