S11519_15 Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – Enhanced near IR sensitivity, using a MEMS technology

IR-enhanced Si APD
S11519 series
Enhanced near IR sensitivity, using a MEMS
technology
HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure
formed on the back side of the photodiode. The S11519 series are a family of Si APDs with improved sensitivity in the near infra-
red region.
The S11519 series provides significantly higher sensitivity to YAG laser light (1.06 μm) compared to our conventional product
(S8890 series).
The S11519 series is a low bias operation type with enhanced sensitivity in the near infrared region. Compared to the conven-
tional product S8890 series, the S11519 series has improved various characteristics such as breakdown voltage, dark current, and
cut-off frequency.
Features
High sensitivity in the near infrared region
High gain
Stable operation at low bias
Applications
YAG laser monitor
Long wavelength light detection
General ratings / absolute maximum ratings
Type no.
Window material*¹
Package
S11519-10
K
TO-5
S11519-30
K
TO-8
*1: K=borosilicate glass
*2: Area in which a typical gain can be obtained
Active area size*²
(mm)
φ1.0
φ3.0
Absolute maximum ratings
Operating temperature
Topr
Storage temperature
Tstg
(°C)
(°C)
-20 to +85
-55 to +125
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Type no.
Spectral
response
range
λ
Peak
sensitivity
wavelength*³
λp
Breakdown
voltage
VBR
ID=100 μA
Typ. Max.
Temp.
coefficient
of VBR
ID=100 μA
(nm)
(nm)
(V)
(V) (V/°C)
S11519-10
S11519-30
600 to 1150
960
350 500
1.7
*3: Values measured at a gain listed in the characteristics table
Dark
current*³
ID
Typ. Max.
(nA) (nA)
3 30
9 90
Terminal
capacitance*³
Ct
Cut-off
frequency*³
fc
RL=50 Ω
(pF)
(MHz)
2.0
400
12.0
230
Excess
noise
fi gure*³
x
λ=890 nm
0.3
Gain
M
λ=890 nm
100
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