S11141-10_15 Datasheet, PDF (3/6 Pages) Hamamatsu Corporation – Electron beam detector Si photodiodes

Si photodiodes
S11141-10, S11142-10
Electron multiplication principle
Output current
Si photodiode
Vacuum
Silicon
Electron
Dead
layer
Detail
Generation of
electron-hole pairs
(electron multiplication)
Electrons generate ions as they pass through silicon. This ionization process generates a
large number of electron-hole pairs that then multiply the number of electrons.
The electron multiplication can boost the output current by approximately 300 times at an
input electron energy of 1.5 keV (refer to "Gain vs. electron energy").
KSPDC0089EA
Dark current vs. reverse voltage
(typical example)
1 μA
(Ta=25 °C)
100 nA
10 nA
1 nA
100 pA
S11141-10
S11142-10
10 pA
1 pA
100 fA
0.1
1
10
Reverse voltage (V)
100
KSPDB0345EA
Terminal capacitance vs. reverse voltage
(Typ. Ta=25 °C)
1 μF
100 nF
10 nF
1 nF
S11141-10
100 pF
S11142-10
10 pF
1 pF
100 fF
0.1
1
10
Reverse voltage (V)
100
KSPDB0346EA
3