S11141-10_15 Datasheet, PDF (2/6 Pages) Hamamatsu Corporation – Electron beam detector Si photodiodes

Si photodiodes
S11141-10, S11142-10
Electrical and optical characteristics (Ta=25 °C)
Parameter
Symbol
Condition
S11141-10
S11142-10*²
Unit
Min. Typ. Max. Min. Typ. Max.
Incident electron energy range
-
1
- 30 1
- 30
keV
Output current
Isc
Electron energy 1.5 keV
Ip=100 pA*³
- 30 -
- 30 -
nA
Dark current
ID
VR=10 mV
VR=5 V
- 0.5 3
- 0.2 1.2
nA
-
5 60 -
3 60
Terminal capacitance
Ct
VR=0 V, f=10 kHz
VR=5 V, f=10 kHz
- 1700 2500 - 800 1200
- 450 680 - 200 300
pF
Cut-off frequency
VR=0 V, RL=50 Ω
λ=400 nm, -3 dB
fc
VR=5 V, RL=50 Ω
λ=400 nm, -3 dB
- 0.4 -
- 0.8 -
MHz
- 2.5 -
-
5
-
Electron multiplying gain
-
Electron energy 1.5 keV
Ip=100 pA*³
- 300 -
- 300 -
-
*2: Per 1 element
*3: Injection current (probe current)
Gain vs. electron energy
10000
(Typ. Ta=25 °C, Ip=100 pA)
1000
100
0
10
20
Electron energy (keV)
30
KSPDB0344EA
Detection efficiency vs. electron energy
(Typ. Ta=25 °C, Ip=100 pA)
100
90
80
70
60
50
40
30
20
10
0
10
20
30
Electron energy (keV)
Gain = Isc/Ip
Detection efficiency = (Gain/GTH) × 100
GTH = Electorn energy/3.62
KSPDB0347EA
2