S10783_15 Datasheet, PDF (3/6 Pages) Hamamatsu Corporation – Si PIN photodiodes

Si PIN photodiodes
S10783, S10784
Dark current vs. reverse voltage
1 nA
(Typ. Ta=25 °C)
Photosensitivity temperature characteristics
+1.0
(Typ.)
100 pA
10 pA
1 pA
100 fA
0.01
0.1
1
10
Reverse voltage (V)
100
KPINB0356EA
+0.5
0
-0.5
400 500 600 700 800 900 1000 1100
Wavelength (nm)
KPINB0357EA
Dark current vs. ambient temperature
10^-7
(Typ. VR=2.5 V)
10^-8
10^-9
10^-10
10^-11
10^-12
10^-13
10^-14
10^-15
10^-16
-20 -10 0
10 20 30 40 50 60 70 80
Ambient temperature (°C)
KPINB0363EA
Terminal capacitance vs. reverse voltage
10 pF
(Typ. Ta=25 °C, f=1 MHz)
1 pF
0.1
1
10
Reverse voltage (V)
100
KPINB0358EA
3