S10783_15 Datasheet, PDF (2/6 Pages) Hamamatsu Corporation – Si PIN photodiodes

Si PIN photodiodes
S10783, S10784
Electrical and optical characteristics (Ta=25 °C)
Parameter
Spectral response range
Peak sensitivity wavelength
Photosensitivity
Dark current
Temperature coefficient of ID
Cutoff frequency
Terminal capacitance
Noise equivalent power
Symbol
Condition
λ
λp
S
λ=660 nm
λ=780 nm
ID VR=2.5 V
TCID
fc
VR=2.5 V λ=660 nm
RL=50 Ω λ=780 nm
Ct VR=2.5 V, f=1 MHz
NEP VR=2.5 V
S10783
Min. Typ. Max.
330 to 1040
-
760
-
0.41 0.46
-
0.47 0.52
-
-
0.01
1.0
-
1.15
-
150
300
-
125
250
-
-
4.5
9
- 3.5 × 10^-15 -
S10784
Min. Typ. Max.
340 to 1040
-
760
-
0.40 0.45
-
0.46 0.51
-
-
0.01
1.0
-
1.15
-
150
300
-
125
250
-
-
4.5
9
- 3.5 × 10^-15 -
Unit
nm
nm
A/W
nA
times/°C
MHz
pF
W/Hz^1/2
Spectral response
0.6
0.5
(Typ. Ta=25 °C)
S10783
0.4
S10784
0.3
0.2
0.1
0
200
400
600
800
1000 1200
Wavelength (nm)
KPINB0355EA
Linearity
1 mA
(Typ. Ta=25 °C, VR=0 V, 2856 K)
100 μA
10 μA
1 μA
100 nA
S10784
10 nA
1 nA
S10783
100 pA
10 pA
0.01 0.1
1
10
100 1000 10000
Illuminance (lx)
KPINB0396EA
2