G4176 Datasheet, PDF (3/4 Pages) Hamamatsu Corporation – ULTRAFAST MSM PHOTODETECTORS

G7096 SERIES
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Item
Symbol Condition
Value
Unit
Maximum Bias Voltage Vb
15
V
Maximum Light Input
Pulsed Light
Φ Pulse width 1ns
10
mW
CW to Pulsed Light
Pulse width 1ns
2
mW
Operating Temperature Top(a)
-40 to +85 °C
Storage Temperature Tstg
-40 to +100 °C
GENERAL CHARACTERISTICS (Ta=25°C)
Item
Symbol
Spectral Response Range λ
Peak Response Wavelength λp
Effective Sensitive Area A
Chip Size
Package
G7096
G7096-01
Condition
V_b = 10 V
Vb = 10 V
Value
850 to 1650
1500
0.2 0.2
11
Unit
nm
nm
mm²
mm²
TO-5
(Unified with SMA connector)
TO-18
Figure 3: Optical Pulse Response
G7096
(Including time response of light source, bias-tee and oscilloscope)
1.1
(Vb = 10 V)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Time (0.1ns/div)
Figure 4: Spectral Response
10⁰
(Vb = 10 V)
ELECTRICAL AND OPTICAL CHARACTERISTICS (Ta=25°C, Vb=10V)
Item
Symbol
Radiant sensitivity _S
Dark Current
Id
NEP*
G7096
G7096-01
Terminal Capacitance
G7096**
Ct
G7096-01
Rise Time
G7096
t_r
G7096-01
Fall Time
Condition
λ = 1.3 µm
Value
Unit
Min. Typ. Max.
0.2 0.4
-
A/W
-
5
20 µA
λ = 1.3 µm 0.2 X 10^-10 2 X 10^-10
-
W/Hz^1/2
0.2 X 10^-10 3 X 10^-10
-
-
0.7 0.8 _pF
-
0.9 1.0
10 to 90 %
-
40 60 ps
-
80 100
G7096
G7096-01
tf
90 to 10 %
-
120 160 _ps
-
160 200
*Noise Equivalent Power
**Value on Chip
G7096-01
(Including time response of light source, assembly circuit and oscilloscope)
1.1
(Vb = 10 V)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Time (0.1ns/div)
10^-1
10^-2
10^-3
0.6
0.8 1.0
1.2
1.4 1.6
1.8
W l th (µ )