G4176 Datasheet, PDF (2/4 Pages) Hamamatsu Corporation – ULTRAFAST MSM PHOTODETECTORS

ULTRAFAST MSM PHOTODETECTORS G4176 SERIES (GaAs) , G7096 SERIES (InGaAs)
G4176 SERIES
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Item
Symbol Condition
Value
Unit
Maximum Bias Voltage Vb
10
V
Maximum Light Input
Pulsed Light
Φ Pulse width 1ns
50
mW
CW to Pulsed Light
Pulse width 1ns
5
mW
Operating Temperature Top(a)
-40 to +85 °C
Storage Temperature Tstg
-40 to +100 °C
GENERAL CHARACTERISTICS (Ta=25°C)
Item
Symbol
Spectral Response Range λ
Peak Response Wavelength λ_p
Effective Sensitive Area A
Chip Size
Package
G4176
G4176-01
Condition
Vb = 7 V
Vb = 7 V
Value
450 to 870
850
0.2 0.2
11
Unit
nm
nm
mm²
mm²
TO-5
(Unified with SMA connector)
TO-18
Figure 1: Optical Pulse Response
G4176
(Including time response of light source, bias-tee and oscilloscope)
1.1
(Vb = 7 V)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
ELECTRICAL AND OPTICAL CHARACTERISTICS (Ta=25°C, Vb=7V)
Item
Symbol
Radiant sensitivity _S
Dark Current
Id
NEP*
G4176
G4176-01
Terminal Capacitance
G4176**
Ct
G4176-01
Rise Time
G4176
tr
G4176-01
Fall Time
G4176
tf
G4176-01
Condition
λ = 850 nm
Value
Unit
Min. Typ. Max.
0.2 0.3
-
A/W
-
100 300 pA
λ = 850 nm 0.2 X 10^-15 3 X 10^-15
-
W/Hz^1/2
0.2 X 10^-15 4 X 10^-15
-
-
0.3 0.4 _pF
-
0.5 0.6
10 to 90 %
-
30 40 ps
-
50 80
90 to 10 %
-
30 40 _ps
-
50 80
*Noise Equivalent Power
**Value on Chip
G4176-01
(Including time response of light source, assembly circuit and oscilloscope)
1.1
(Vb = 7 V)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Time (0.1ns/div)
Time (0.1ns/div)
Figure 2: Spectral Response
10⁰
(Vb = 7 V)
10^-1
10^-2
10^-3
300 400 500 600 700 800 900 1000
Wa elength (nm)