G1746 Datasheet, PDF (3/4 Pages) Hamamatsu Corporation – GaAsP photodiode

sShunt resistance vs. ambient temperature
10 TΩ
(Typ. VR=10 mV)
1 TΩ
100 GΩ
10 GΩ
G1746
1 GΩ
100 MΩ
G1747
10 MΩ
-20
0
20
40
60
AMBIENT TEMPERATURE (˚C)
80
KGPDB0043EA
GaAsP photodiode G1746, G1747
sShort circuit current linearity
(Typ. Ta=25 ˚C, A light source fully illuminated)
10⁰
10^-2
RL=100 Ω
10^-4
10^-6
10^-8
10^-10
10^-12
10^-14
Refer to NEP value in characteristic table.
10^-1₁⁶_{0-16 10-14 10-12 10-10 10-8 10-6 10-4 10-2 100}
INCIDENT LIGHT LEVEL (lx)
KGPDB0008EA
sDimensional outlines (unit: mm)
➀ G1746
WINDOW
5.9 ± 0.1
9.1 ± 0.2
8.1 ± 0.1
PHOTOSENSITIVE
SURFACE
0.45
LEAD
5.08 ± 0.2
CONNECTED
TO CASE
KGPDA0006EA