G1746 Datasheet, PDF (2/4 Pages) Hamamatsu Corporation – GaAsP photodiode

sSpectral response
0.3
(Typ. Ta=25 ˚C)
0.25
0.2
0.15
0.1
0.05
0
190
400
600
WAVELENGTH (nm)
800
KGPDB0039EA
GaAsP photodiode G1746, G1747
sPhoto sensitivity temperature characteristic
(Typ.)
+1.5
+1.0
+0.5
0
-0.5
190
400
600
WAVELENGTH (nm)
800
KGPDB0040EA
sRise time vs. load resistance
10 ms
(Typ. Ta=25 ˚C, VR=0 V)
sDark current vs. reverse voltage
1 nA
(Typ. Ta=25 ˚C)
1 ms
100 µs
10 µs
1 µs
G1747
G1746
100 pA
10 pA
1 pA
G1747
G1746
100 ns₁₀₂
10³
10⁴
10⁵
LOAD RESISTANCE (Ω)
10⁶
KGPDB0041EA
100 fA
0.001
0.01
0.1
1
REVERSE VOLTAGE (V)
10
KGPDB0042EA