G11135-256DD_15 Datasheet, PDF (3/10 Pages) Hamamatsu Corporation – Single video line (256/512 pixels) near infrared image sensor (0.95 to 1.7 m)

InGaAs linear image sensors
G11135-256DD, G11135-512DE
Electrical and optical characteristics (Ta=25 °C, Vdd=5 V, INP, Vinp, PDN=4 V, Fvref=1.2 V, f=5 MHz)
Parameter
Spectral response range
Peak sensitivity wavelength
Photo sensitivity
Conversion efficiency*¹
Saturation charge*²
Saturation voltage*²
Photoresponse nonuniformity*³
Average dark output*⁴
Dark output nonuniformity*⁴
Readout noise*⁴
Dynamic range
Defective pixels*⁵
Symbol
λ
λp
S
CE
Qsat
Vsat
PRNU
VDmean
DSNU
N
D
-
Condition
λ=λp
High gain
Low gain
Min.
1.45
0.7
-
-
2.3
-
1.05
-
-
1200
-
Typ.
0.95 to 1.7
1.55
0.82
930
160
2.8
2.6
±5
1.25
±3
1
2600
-
Max.
-
1.65
-
-
-
-
±10
1.45
±10
2
-
1
*1: Cf_select=0 V (high gain), 5 V (low gain)
*2: High gain, integration time 500 μs
*3: High gain, 50% of saturation, after dark output subtraction, excluding first and last pixels, integration time 200 μs
*4: High gain, integration time 200 μs
*5: Pixels with photoresponse nonuniformity, readout noise, or dark output nonuniformity higher than the maximum value
Unit
μm
μm
A/W
nV/e^-
Me^-
V
%
V
mV
mV rms
-
%
Electrical characteristics (Ta=25 °C)
Parameter
Symbol
Min.
Supply current
256 ch
512 ch
lvdd
-
-
Differential reference current
Ifvref
-
Video line reset voltage
Ivinp
-
Input stage amplifier reference current
I(INP)
-
Pixel voltage
I(PDN)
-
Output voltage
High
Low
VIDEO
-
-
Clock frequency
f
0.1
Output impedance
Zo
-
Data rate
DR
0.1
A/D trigger,
A/D start pulse voltage
High
Low
Vtrg,Vsp
-
-
Thermistor resistance
Thermistor B constant*⁶
Rth
-
B
-
*6: T1=25 °C, T2=50 °C
Typ.
50
75
-
-
-
-
3.85
1.25
-
5
f
Vdd
GND
10
3950
Max.
Unit
75
100
mA
1
mA
1
mA
1
mA
1
mA
-
-
V
5
MHz
-
kΩ
5
MHz
-
-
V
-
kΩ
-
K
3