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G11135-256DD_15 Datasheet, PDF (1/10 Pages) Hamamatsu Corporation – Single video line (256/512 pixels) near infrared image sensor (0.95 to 1.7 m)
InGaAs linear image sensors
G11135-256DD, G11135-512DE
Single video line (256/512 pixels)
near infrared image sensor (0.95 to 1.7 μm)
The G11135 series InGaAs linear image sensors designed for foreign object inspection equipment. These linear image sensors
consist of an InGaAs photodiode array and CMOS chip that contains a charge amplifier array, an offset compensation circuit,
a shift register, and a timing generator. The InGaAs photodiode array and the CMOS chip are electrically connected by indium
bumps.
The charge amplifier array is made up of CMOS transistors connected to each pixel of the InGaAs photodiode array.
Signals from each pixel are read out in charge integration mode to achieve high sensitivity and stable operation in the near
infrared spectral range.
The signal processing circuit on the CMOS chip offers two levels of conversion efficiency (CE) that can be selected by the ex-
ternal voltage to meet the application.
Features
Single video line (256/512 pixels)
High-speed data rate: 5 MHz max.
Choice of two conversion efficiency levels
Pixel size: G11135-256DD (50 × 50 μm)
G11135-512DE (25 × 25 μm)
Built-in temperature sensor
Small variations in dark output between pixels
Room temperature operation
Applications
Foreign object screening
Agricultural product inspection
Related products
Driver circuit for InGaAs liner image sensor C11514
General ratings
Parameter
Cooling
Number of total pixels
Number of effective pixels
Image size
Pixel size
Pixel pitch
Package
Window material
Cross sectional image
CMOS chip
Bump
G11135-256DD
G11135-512DE
Non-cooled
256
512
256
512
12.8 × 0.05
12.8 × 0.025
50 × 50
25 × 25
50
25
22-pin ceramic (refer to the dimensional outline)
Borosilicate glass with anti-reflective coating
InGaAs photodiode array
Window
Wire bonding
Unit
-
pixels
pixels
mm
μm (H) × μm (V)
μm
-
-
KMIRC0053EA
www.hamamatsu.com
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