G11097-0606S_15 Datasheet, PDF (3/9 Pages) Hamamatsu Corporation – Image sensor with 64 x 64 pixels developed for two-dimensional infrared imaging

InGaAs area image sensor
G11097-0606S
Recommended drive conditions
Parameter
Symbol
Min.
Typ.
Max.
Supply voltage
Vdd
4.9
5
5.1
Ground
Vss
-
0
-
Element bias
PD_bias
4.4
4.5
4.6
Clock pulse voltage
High
Low
V(MCLK)
Vdd - 0.5
0
Vdd
Vdd + 0.5
0
0.5
Start pulse voltage
High
Low
V(MSP)
Vdd - 0.5
0
Vdd
Vdd + 0.5
0
0.5
Electrical characteristics (Ta=25 °C)
Parameter
Symbol
Min.
Typ.
Max.
Current consumption
I(Vdd)
-
I(PD_bias)
-
30
60
-
1
Video output voltage
High
Low
VH
VL
3.1
1.1
3.3
1.3
3.5
1.5
Clock frequency
f
-
-
40
Video data rate
fV
-
f/8
5
Thermistor resistance
Rth
8.2
9
9.8
Equivalent circuit
Whole image sensor
1 pixel
Vb1
0.1 μF
Photodiode
Reset
Switch
Sample-and-hold Switch
Thermistor
Shift
register
Offset
compensation
circuit
One-stage
TE-cooler
Timing
generator
Unit.
V
V
V
V
V
Unit.
mA
mA
V
MHz
MHz
kΩ
THERM
THERM
VIDEO
AD_TRIG
PD_bias
Vdd
Vss
External input
TE(+) TE(-) MCLK MSP
KMIRC0063ED
3