S9682_11 Datasheet, PDF (2/3 Pages) Hamamatsu Corporation – Si photodiode Highly reliable photodiode for VUV detection

s Variation in sensitivity due to VUV exposure
[Typ. ArF excimer laser, 0.1 mJ/cm²/pulse, f=100 Hz, λ=193 nm, pulse width=15 ns (FWHM)]
120
100
80
S9682, S9683
60
40
CONVENTIONAL TYPE
20
0
1 × 10⁶
5 × 10⁶
NUMBER OF SHOT
s Dimensional outlines (unit: mm)
S9682
13.9 ± 0.2
12.35 ± 0.1
9.1 ± 0.1
Y
X
1 × 10⁷
KSPDB0254EA
ACTIVE AREA
5.8 × 5.8
0.085
QUARTZ WINDOW
PHOTOSENSITIVE
SURFACE
0.45
LEAD
7.5 ± 0.2
ANODE TERMINAL MARK
1.4
Center of active area relative
to center of cap
-0.485≤X≤+0.315
-0.4≤Y≤+0.4
COMMON TO CASE
KSPDA0165EC
Si photodiode S9682, S9683
S9683
ACTIVE AREA
10 × 10
(2 ×) 4
42.0 ± 0.3
34.0 ± 0.2
( 24.5)
WINDOW
16.0 ± 0.2
QUARTZ WINDOW (t=1.0)
PHOTOSENSITIVE
SURFACE
COMMON TO CASE
KSPDA0166EA
2