S9037-0902_15 Datasheet, PDF (2/12 Pages) Hamamatsu Corporation – CCD image sensor

CCD image sensor
S9037/S9038 series
Absolute maximum ratings (Ta=25 °C)
Parameter
Operating temperature*⁴
Symbol
Topr
Min.
Typ.
Max.
Unit
-50
-
+70
°C
Storage temperature
Tstg
-50
-
+70
°C
Output transistor drain voltage
Reset drain voltage
Horizontal input source voltage
Horizontal input gate voltage
Summing gate voltage
Output gate voltage
Reset gate voltage
Transfer gate voltage
Vertical shift register clock voltage
Horizontal shift register clock voltage
VOD
-0.5
-
+25
V
VRD
-0.5
-
+18
V
VISH
-0.5
-
+18
V
VIG1H, VIG2H
-10
-
+15
V
VSG
-10
-
+15
V
VOG
-10
-
+15
V
VRG
-10
-
+15
V
VTG
-10
-
+15
V
VP1V, VP2V
-10
-
+15
V
VP1H, VP2H
-10
-
+15
V
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
*4: Chip temperature
Operating conditions (MPP mode, Ta=25 °C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Output transistor drain voltage
VOD
12
15
-
V
Reset drain voltage
VRD
11.5
12
12.5
V
Output gate voltage
VOG
1
3
5
V
Substrate voltage
VSS
-
0
-
V
Test point
Horizontal input source
VISH
-
VRD
Horizontal input gate
VIG1H, VIG2H
-9
-8
-
V
0
V
Vertical shift register
High
VP1VH, VP2VH
4
clock voltage
Low
VP1VL, VP2VL
-9
6
-8
8
-7
V
Horizontal shift register
High
VP1HH, VP2HH
4
clock voltage
Low
VP1HL, VP2HL
-9
6
-8
8
-7
V
Summing gate voltage
High
Low
VSGH
VSGL
4
6
8
V
-9
-8
-7
Reset gate voltage
High
Low
VRGH
VRGL
4
6
8
-9
-8
-7
V
Transfer gate voltage
High
Low
VTGH
VTGL
4
-9
6
-8
8
-7
V
External load resistance
RL
2.0
2.2
2.4
kΩ
Electrical characteristics (Typ. Ta=25 °C unless otherwise noted)
Parameter
Symbol
Min.
Signal output frequency
fc
-
Line rate
-0902
LR
-
-1002
-
Vertical shift register capacitance
-0902
-1002
CP1V, CP2V
-
-
Horizontal shift register capacitance
-0902
-1002
CP1H, CP2H
-
-
Summing gate capacitance
CSG
-
Reset gate capacitance
CRG
-
Transfer gate capacitance
Transfer efficiency*⁵
CTG
-
CTE
0.99995
DC output level
Output impedance*⁶
Power dissipation*⁶ *⁷
Vout
-
Zo
-
P
-
*5: Charge transfer efficiency per pixel, measured at half of the full well capacity
*6: The values depend on the load resistance.
*7: Power dissipation of the on-chip amplifier plus load resistance
Typ.
-
16
8
100
200
130
170
30
30
50
0.99999
7
500
100
Max.
Unit
10
MHz
-
kHz
-
-
pF
-
pF
-
pF
-
pF
-
pF
-
pF
-
pF
-
-
-
V
-
Ω
-
mW
2