S12551-2048_15 Datasheet, PDF (2/8 Pages) Hamamatsu Corporation – CCD linear image sensor

CCD linear image sensor
S12551-2048
Operating conditions (Ta=25 °C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Output transistor drain voltage
VOD
14
15
16
V
Reset drain voltage
VRD
13
14
15
V
Anti-blooming drain voltage
VABD
13
14
15
V
Test point
Horizontal input source voltage
Horizontal input gate voltage
VISH
VIGH
-
-5
VRD
-4
-
-
V
Anti-blooming gate voltage
High
VABGH
2
5
Low
VABGL
-4
-2
8
0
V
Summing gate voltage
High
VSGH
2
Low
VSGL
-5
5
-4
8
-3
V
Output gate voltage
VOG
3
5
7
V
Substrate voltage
VSS
-
0
-
V
Reset gate voltage
High
VRGH
8
Low
VRGL
-1
9
0
10
1
V
Transfer gate voltage
High
VTGH
7
Low
VTGL
-5
8
-4
9
-3
V
Horizontal shift register clock voltage
High
Low
VP1HH, VP2HH
VP1HL, VP2HL
2
-5
5
-4
8
-3
V
External load resistance
RL
2.0
2.2
2.4
kΩ
Electrical characterisitics (Ta=25 °C, operating conditions: Typ., unless otherwise noted)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Output signal frequency*²
fop
-
20
40
MHz
Line rate
Without electronic shutter
With electronic shutter
LRnes
LRes
-
-
9.5
9.5
19.2
18.7
kHz
Horizontal shift register capacitance
CP1H, CP2H
-
220
-
pF
Anti-blooming gate capacitance
CABG
-
80
-
pF
Summing gate capacitance
CSG
-
10
-
pF
Reset gate capacitance
CRG
-
10
-
pF
Transfer gate capacitance
Charge transfer efficiency*³
DC output level*²
Output impedance*²
Power consumption*² *⁴
CTG
-
120
CTE
0.99995
0.99999
Vo
8
9
Zo
-
160
P
-
100
-
pF
-
-
10
V
-
Ω
140
mW
*2: The value depends on the load resistance.
*3: Charge transfer efficiency per pixel of CCD shift register, measured at half of the full well capacity
*4: Power consumption of the on-chip amplifier plus load resistance
Electrical and optical characterisitics (Ta=25 °C, operating conditions: Typ., unless otherwise noted)
Parameter
Symbol
Min.
Typ.
Max.
Saturation output voltage
Vsat
-
Fw × Sv
-
Full well capacity
Csat
70
100
-
CCD node sensitivity
CCE
11
13
15
Dark current (maximum of all effective pixels)
ID max
-
Readout noise*⁶
Nread
-
15
75
40
60
Dynamic range*⁷
DR
1167
2500
-
Spectral response range
Photoresponse nonuniformity*⁸ *⁹
Image lag*⁸
λ
PRNU
Lag
-
200 to 1000
-
-
±3
±10
-
0.1
1
*5: Dark current is reduced to half for every 5 to 7 °C decrease in temperature.
*6: Readout frequency 40 MHz
*7: Dynamic range = Full well capacity / Readout noise
*8: Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 470 nm)
Fixed pattern noise (peak to peak)
*9: Photoresponse nonuniformity =
× 100 [%]
Signal
Unit
V
ke^-
μV/e^-
e^-/pixel/ms
e^- rms
-
nm
%
%
2