S1227 Datasheet, PDF (2/4 Pages) Hamamatsu Corporation – Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity

s Spectral response
0.7
(Typ. Ta=25 ˚C)
0.6
0.5
S1227-BR
0.4
0.3 S1227-BQ
0.2
S1227-BQ
0.1
0
190
S1227-BR
400
600
800
WAVELENGTH (nm)
1000
KSPDB0094EA
s Rise time vs. load resistance
1 ms
(Typ. Ta=25 ˚C, VR=0 V)
S1227-1010BQ/BR
100 µs
S1227-66BQ/BR
10 µs
1 µs
100 ns
10 ns
10²
S1227-16BQ/BR, -33BQ/BR
10³
10⁴
10⁵
LOAD RESISTANCE (Ω)
KSPDB0095EA
s Shunt resistance vs. ambient temperature
1 TΩ
(Typ. VR=10 mV)
100 GΩ
S1227-33BQ/BR
10 GΩ
1 GΩ
100 MΩ
S1227-1010BQ/BR
S1227-16BQ/BR
10 MΩ
1 MΩ
S1227-66BQ/BR
100 kΩ
10 kΩ_-20
0
20
40
60
80
AMBIENT TEMPERATURE (˚C)
KSPDB0097EA
2
Si photodiode S1227 series
s Photo sensitivity temperature characteristic
+1.5
(Typ. )
+1.0
+0.5
0
-0.5
190
400
600
800
1000
WAVELENGTH (nm)
KSPDB0030EB
s Dark current vs. reverse voltage
1 nA
(Typ. Ta=25 ˚C)
100 pA
S1227-1010BQ/BR
10 pA
S1227-66BQ/BR
1 pA
100 fA
0.01
S1227-16BQ/BR
S1227-33BQ/BR
0.1
1
10
REVERSE VOLTAGE (V)
KSPDB0096EB