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S1227 Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity
PHOTODIODE
Si photodiode
S1227 series
For UV to visible, precision photometry; suppressed IR sensitivity
Features
l High UV sensitivity: QE 75 % (λ=200 nm)
l Suppressed IR sensitivity
l Low dark current
Applications
l Analytical equipment
l Optical measurement equipment, etc.
s General ratings / Absolute maximum ratings
Type No.
S1227-16BQ
S1227-16BR
S1227-33BQ
S1227-33BR
S1227-66BQ
S1227-66BR
S1227-1010BQ
S1227-1010BR
Dimensional
outline/
Window
material *
➀/Q
➁/R
➂/Q
➃/R
➄/Q
➅/R
➆/Q
➇/R
Package
(mm)
2.7 × 15
6 × 7.6
8.9 × 10.1
15 × 16.5
Active
area size
(mm)
1.1 × 5.9
2.4 × 2.4
5.8 × 5.8
10 × 10
Effective
active area
(mm2)
5.9
5.7
33
100
Absolute maximum ratings
Reverse
Operating
Storage
voltage
temperature temperature
VR Max.
Topr
Tstg
(V)
(°C)
(°C)
5
-20 to +60 -20 to +80
s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Type No.
Spectral Peak
response sensitivity
range wavelength
λ
λp
Photo sensitivity
S
(A/W)
λp
200 nm
He-Ne
Laser
Short circuit
current
Isc
100 lx
Min. Typ.
Dark
current
ID
VR=10 mV
Max.
Temp.
coefficient
TCID
Rise
time
tr
VR=0 V
RL=1 kΩ
Terminal
capacitance
Ct
VR=0 V
f=10 kHz
Shunt
resistance
Rsh
VR=10 mV
(GΩ)
NEP
(nm) (nm)
Min. Typ. 633 nm (µA) (µA) (pA) (times/° C) (µs) (pF) Min. Typ. (W/Hz1/2)
S1227-16BQ 190 to 1000
S1227-16BR 320 to 1000
0.36 0.10 0.12 0.34 2 3.2
0.43 - - 0.39 2.2 3.7
5
0.5
170
2
20
2.5 × 10-15
2.1 × 10-15
S1227-33BQ
S1227-33BR
S1227-66BQ
S1227-66BR
190 to 1000
0.36 0.10 0.12 0.34 2 3.0
320 to 1000
190 to 1000 720
0.43 - -
0.36 0.10 0.12
0.39
0.34
2.2
11
3.7
16
320 to 1000
0.43 - - 0.39 13 19
5
20
1.12
0.5
2
160
2
20
2.5 × 10-15
2.1 × 10-15
950
0.5
5
5.0 × 10-15
4.2 × 10-15
S1227-1010BQ 190 to 1000
S1227-1010BR 320 to 1000
0.36 0.10 0.12 0.34 32 44
0.43 - - 0.39 36 53
50
7
3000
0.2
2
8.0 × 10-15
6.7 × 10-15
* Window material Q: quartz glass, R: resin coating
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