S12028_KPIN1083E01 Datasheet, PDF (2/3 Pages) Hamamatsu Corporation – Enhanced near IR sensitivity, using a MEMS

Si PIN photodiode
S12028
Spectral response
0.8
0.7
(Typ. Ta=25 °C, VR=10 V)
S12028
0.6
QE=100%
0.5
0.4
0.3
S5821
0.2
0.1
0
200
400
600
800
1000 1200
Wavelength (nm)
KPINB0376EB
Dark current vs. reverse voltage
10 nA
(Typ. Ta=25 °C)
Photosensitivity temperature characteristics
(Typ. VR=10 V)
1.5
1.0
S5821
0.5
S12028
0
-0.5
300 400 500 600 700 800 900 1000 1100 1200
Wavelength (nm)
KPINB0377EB
Terminal capacitance vs. reverse voltage
(Typ. f=1 MHz)
1 nF
1 nA
100 pA
10 pA
100 pF
10 pF
1 pA
0.01
0.1
1
10
Reverse voltage (V)
100
KPINB0378EA
1 pF
0.1
1
10
Reverse voltage (V)
100
KPINB0379EA
2