S12028_KPIN1083E01 Datasheet, PDF (1/3 Pages) Hamamatsu Corporation – Enhanced near IR sensitivity, using a MEMS

IR-enhanced Si PIN photodiode
S12028
Enhanced near IR sensitivity, using a MEMS
techonology
The S12028 is Si PIN photodiode that offers enhanced near infrared sensitivity due to a MEMS structure formed on the backside of
the photodiode. The S12028 offers significantly higher sensitivity than our previous product (S5821).
Features
High sensitivity in near infrared range: 0.5 A/W (λ=1060 nm)
Photosensitive area: φ1.2 mm
High reliability package : 2-pin TO-18
Applications
Analytical instruments
NOx detection
YAG laser monitor
Structure
Parameter
Photosensitive area
Package
Window material
Specification
Unit
φ1.2
mm
TO-18
-
Borosilicate glass
-
Absolute maximum ratings
Parameter
Reverse voltage
Operating temperature
Storage temperature
Symbol
VR max
Topr
Tstg
Condition
Ta=25 °C
Specification
Unit
20
V
-40 to +100
°C
-55 to +125
°C
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Electrical and optical characteristics (Ta=25 °C)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Spectral response range
λ
-
360 to 1140
-
nm
Peak sensitivity wavelength
λp
-
980
-
nm
Photosensitivity
S
λ=λp, VR=10 V
0.55
0.68
λ=1060 nm, VR=10 V
0.4
0.5
Short circuit current
Isc 100 lx, 2856 K
-
1.2
Dark current
ID
VR=10 V
-
0.05
-
A/W
-
-
μA
2
nA
Rise time
VR=10 V, RL=1 kΩ
tr
λ=1060 nm
-
10
-
μs
10% to 90%
Terminal Capacitance
Ct VR=10 V, f=1 MHz
-
4
6
pF
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