G12072-54_15 Datasheet, PDF (2/4 Pages) Hamamatsu Corporation – InGaAs PIN photodiode with preamp

InGaAs PIN photodiode with preamp
G12072-54
Electrical and optical characteristics (Recommended operating conditions, unless otherwise noted)*³
Parameter
Responsivity*⁴
Symbol
Condition
Min.
R
λ=1.31 μm, Pin=-10 dBm
0.70
Supply current
Cutoff frequency
Low cutoff frequency
Transimpedance*⁵
Icc
Dark state, RL=∞
-
fc
λ=1.31 μm, -3 dB
Pin=-18 dBm, fref=1 GHz
7.0
λ=1.31 μm, -3 dB
fc-L
Pin=-18 dBm, fref=100 MHz
-
Extinction ratio=6 dB
Tz
f=1 GHz, Pin=-18 dBm
1.0
Minimum receivable sensitivity
(average)
Maximum receivable sensitivity
(average)
Pmin
Pmax
11.3 Gbps, λ=1.31 μm
PRBS=2³¹-1, BER=10^-12
Extinction ratio=14 dB
-
+2
Output amplitude
Vomax Differential, Pin=-5 dBm
200
RSSI offset current
Optical return loss*⁶
IRSSI
Dark state, RL=∞
Vcc=3.3 V
2.5
ORL
λ=1.31 μm
12
*3: Output=capacitive coupling
*4: Responsivity=2×(RSSI output current-RSSI offset current)/Optical input power
*5: Single-ended (Vout+) measurement
*6: Metal package type with anti-reflection (ORL≥27 dB) is also available.
Typ.
0.80
28
10.0
30
2.25
-19.5
+4
280
10
14
Max.
-
50
-
100
-
-17.5
-
400
17
-
Unit
A/W
mA
GHz
kHz
kΩ
dBm
dBm
mVpp
μA
dB
Bit error rate
10^{-3 (Ta=25 °C, bit rate 11.3 Gbps, Vcc=3.3 V, λ=1.31 µm, extinction ratio 14 dB, PRBS=231-1)}
10^-4
10^-5
10^-6
10^-7
10^-8
10^-9
10^-10
10^-11
10^-12
-25 -24 -23 -22 -21 -20 -19 -18 -17
Average optical input power (dBm)
KIRDB0472EA
Frequency response
(Ta=25 °C, Vcc=3.3 V, λ=1.31 µm, Pin=-18 dBm)
5
0
-5
-10
-15
-20
-25
-30
0 2 4 6 8 10 12 14 16 18 20
Frequency (GHz)
KIRDB0473EA
2