G12072-54_15 Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – InGaAs PIN photodiode with preamp

InGaAs PIN photodiode with preamp
G12072-54
ROSA type, 1.3 μm, 10 Gbps
Features
φ1.25 mm sleeve type ROSA
(receiver optical sub-assembly)
High-speed response: 11.3 Gbps
Low power supply voltage: Vcc=3.3 V
Differential output
Sensitivity: +5 to -19.5 dBm typ.
Flexible board interface
Applications
8 gigabit fiber channel
10 gigabit ethernet (LR)
SFP + transceiver correspondence
The device is susceptible to static electricity. To prevent the devices
from electrostatic damage, take measures against electrostatic charg-
es, such as grounding yourself, the workbench and tools.
Absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
Value
Unit
Vcc
Supply voltage
-0.3, +4.0
V
VRSSI
Operating temperature*¹ *²
Topr
-20 to +90
°C
Storage temperature*¹
Tstg
-40 to +90
°C
Note: Absolute maximum ratings are the values that must not be exceeded at any time. If even one of the absolute maximum ratings
is exceeded even for a moment, the product quality may be impaired. Always be sure to use the product within the absolute
maximum ratings.
*1: No condensation
*2: Case temperature
Recommended operating conditions (Case temperature=-20 to +90 °C, no condensation)
Parameter
Supply voltage
Spectral response range
Load resistance
Data rate
Symbol
Vcc
VRSSI
λ
RL
-
Condition
Vcc-GND
VRSSI-GND
Capacitive coupling
NRZ, Mark ratio=1/2
Value
2.97 to 3.63
less than 2
1.26 to 1.37
50
8.5 to 11.3
Unit
V
V
μm
Ω
Gbps
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