S9295 Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – Large area photodiode integrated with op amp and TE-cooler

PHOTODIODE
Si photodiode with preamp
S9295 series
Large area photodiode integrated with op amp and TE-cooler
S9295 series is a thermoelectrically cooled Si photodiode with preamp developed for low-light-level detection. A large area photodiode, op amp,
TE-cooler and feedback resistor (10 GΩ) are integrated into a single package. A thermistor is also included in the same package for temperature
control so that the photodiode and I-V conversion circuit can be cooled for stable operation. S9295 series also features low noise and low NEP,
and is especially suitable for NOx detection. The active area of the photodiode is internally connected to the GND terminal making it highly
resistant to EMC noise.
Features
l Large active area: 10 × 10 mm
l UV to NIR Si photodiode optimized for precision photometry
l Compact hermetic package with sapphire window
l High precision FET input operational amplifier
l High gain: Rf=10 GΩ
l Low noise and NEP
l High cooling efficiency
S9295 : ∆T=50 ˚C
S9295-01: ∆T=30 ˚C
l High stability with thermistor
l Highly resistant to EMC noise
Applications
l NOx detection
l Low-light-level measurement, etc.
S9295 series may be damaged by Electro Static Discharge, etc. Please see Precautions for use in the last page.
s Absolute maximum ratings
Parameter
Supply voltage (preamp)
Operating temperature
Storage temperature
TE-cooler allowable voltage *¹
TE-cooler allowable current
Thermistor power dissipation
*1: Ripple Max.: 10 %
*2: S9295-01: 3.7 V
Symbol
Vcc
Topr
Tstg
Vte
Ite
Pth
Value
±20 V
-30 to +60 °C
-40 to +80 °C
5 V *²
1A
0.2 mW
s Recommended operating conditions
Parameter
Symbol
Supply voltage (preamp)
Vcc
TE-cooler current
Ite
Thermistor power dissipation Pth
Load resistance
RL
Value
±5 to ±15 V
0.8 A Max.
0.03 mW Max.
100 kΩ Min.
s Electrical and optical characteristics (Typ. Vcc=±15 V, RL=1 MΩ)
Parameter
Symbol
Condition
S9295
T= -25 °C
S9295-01
T= -5 °C
Spectral response range
λ
190 to 1100
Peak sensitivity wavelength
λp
960
Feedback resistance (built-in) *³
Rf
10
Photo sensitivity
S
λ=200 nm
λ=λp
0.9
5.1
0.9
5.1
Output noise voltage
Vn ^{D ark state, f=10 Hz}
20
25
Noise equivalent power
NEP λ=λp, f=10 Hz
4
5
Output offset voltage
Vos Dark state
±2
±2
Cut-off frequency
fc -3 dB
190
180
Output voltage swing
Vo
13
Supply current
Icc Dark state
0.3
Thermistor resistance
Rth
86
30
*3: Custom devices are available with different Rf values and/or internal Cf, etc.
Unit
nm
nm
GΩ
V/nW
µVrms/Hz^1/2
fW/Hz^1/2
mV
Hz
V
mA
kΩ
1