English
Language : 

GTS9926E Datasheet, PDF (4/4 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET
ISSUED DATE :2005/01/07
REVISED DATE :2006/12/25B
Fig 7. Gate Charge Characteristics Fig 8. Effective Transient Thermal Impedance
Fig 9. Maximum Safe Operating Area Fig 10. Gate Threshold Voltage v.s. Junction
Temperature
Fig 11. Forward Characteristics of
Reverse Diode
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GTC9926E
Page: 4/4