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GTS9926E Datasheet, PDF (2/4 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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ISSUED DATE :2005/01/07
REVISED DATE :2006/12/25B
Electrical Characteristics (Tj = 25ć unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
20
-
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
0.1
-
V VGS=0, ID=250uA
-
V/к Reference to 25к, ID=1mA
Gate Threshold Voltage
Forward Transconductance
VGS(th) 0.5
-
-
gfs
-
9.7
-
V VDS=VGS, ID=250uA
S VDS=10V, ID=4.6A
Gate-Source Leakage Current
IGSS
-
-
±10 uA VGS= ±10V
Drain-Source Leakage Current(Tj=25к)
-
-
1
uA VDS=20V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
25
uA VDS=20V, VGS=0
-
Static Drain-Source On-Resistance RDS(ON)
-
-
28
VGS=4.5V, ID=4A
m
-
40
VGS=2.5V, ID=2A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg
- 12.5 -
ID=4.6A
Qgs
-
1
-
nC VDS=20V
Qgd
-
6.5
-
VGS=5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
-
820
-
-
934
-
-
860
-
-
510
-
VDS=10V
ID=1A
ns VGS=4.5V
RG=6
RD=10
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
-
231
-
-
164
-
-
137
-
VGS=0V
pF VDS=10V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current(Body Diode)
Continuous Source Current(Body Diode)1
Symbol
VSD
IS
ISM
Min.
-
-
-
Typ.
-
-
-
Max.
1.2
1.25
20
Unit
Test Conditions
V IS=1.25, VGS=0V, Tj=25к
A VD= VG=0V, VS=1.2V
A
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on FR4 board, tЉ10sec.
GTC9926E
Page: 2/4
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