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| GU60L02 Datasheet, PDF (2/5 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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ISSUED DATE :2005/03/01
REVISED DATE :2005/12/12B
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
25
-
-
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
0.037
-
V VGS=0, ID=250uA
V/к Reference to 25к, ID=1mA
Gate Threshold Voltage
Forward Transconductance
VGS(th) 1.0
-
3.0
gfs
-
30
-
V VDS=VGS, ID=250uA
S VDS=10V, ID=25A
Gate-Source Leakage Current
IGSS
-
- ±100 nA VGS= ±20V
Drain-Source Leakage Current(Tj=25к)
-
-
1
uA VDS=25V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=150к)
-
-
25
uA VDS=20V, VGS=0
-
Static Drain-Source On-Resistance RDS(ON)
-
Total Gate Charge2
Qg
-
Gate-Source Charge
Qgs
-
Gate-Drain (âMillerâ) Change
Turn-on Delay Time2
Qgd
-
Td(on)
-
Rise Time
Tr
-
Turn-off Delay Time
Td(off)
-
Fall Time
Tf
-
Input Capacitance
Ciss
-
Output Capacitance
Coss
-
Reverse Transfer Capacitance
Crss
-
-
13
VGS=10V, ID=25A
m
-
26
VGS=4.5V, ID=20A
21
-
ID=25A
2.8
-
nC VDS=20V
16
-
VGS=5V
8
-
VDS=15V
75
-
ID=20A
ns VGS=10V
22
-
RG=3.3
20
-
RD=0.75
605
-
415
-
195
-
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)1
Symbol
VSD
IS
ISM
Min.
-
-
-
Typ.
-
-
-
Max.
1.26
50
180
Unit
Test Conditions
V IS=50A, VGS=0V, Tj=25к
A VD=VG=0V, VS=1.26V
A
Drain-Source Avalanche Ratings
Parameter
Symbol Min.
Single Pulse Avalanche Energy2
EAS
-
Avalanche Current
IAR
-
Typ.
-
-
Max.
61
35
Unit
Test Conditions
mJ VDD=25V, ID=35A, L=100uH
A VGS=10V
Notes: 1. Pulse width limited by safe operating area.
2. Pulse widthÐ300us, duty cycleÐ2%.
GU60L02
Page: 2/5
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