GU60L02 Datasheet, PDF (1/5 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product
ISSUED DATE :2005/03/01
REVISED DATE :2005/12/12B
GU60L02
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
25V
13m
50A
Description
The GU60L02 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Low Gate Charge
*Fast Switching
Package Dimensions
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
Continuous Drain Current, V_GS@10V
Continuous Drain Current, V_GS@10V
Pulsed Drain Current¹
Total Power Dissipation
V_GS
I_D @TC=25к
I_D @TC=100к
I_DM
P_D @TC=25к
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-case
Rthj-amb
REF.
A
b
L4
c
L3
L1
E
Millimeter
Min. Max.
REF.
4.40 4.80 c2
0.76 1.00 b2
0.00 0.30 B D
0.36 0.5
e
1.50 REF.
L
2.29 2.79
9.80 10.4 L2
Millimeter
Min. Max.
1.25 1.45
1.17 1.47
8.6 9.0
2.54 REF.
14.6 15.8
0˚
8˚
1.27 REF.
Ratings
25
±20
50
32
180
62.5
0.5
-55 ~ +150
Unit
V
V
A
A
A
W
W/к
к
Value
2.0
62
Unit
к/W
к/W
GU60L02
Page: 1/5