English
Language : 

GTS9922E Datasheet, PDF (2/4 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET
◁
ISSUED DATE :2005/10/26
REVISED DATE :2007/01/25B
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
20
-
-
V VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
0.05
-
V/к Reference to 25к, ID=1mA
Gate Threshold Voltage
Forward Transconductance
VGS(th) 0.5
-
1.2
gfs
-
22
-
V VDS=VGS, ID=1mA
S VDS=4.5V, ID=6A
Gate-Source Leakage Current
IGSS
-
-
±10 uA VGS= ±12V
Drain-Source Leakage Current(Tj=25к)
-
-
10
uA VDS=20V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
100 uA VDS=16V, VGS=0
-
Static Drain-Source On-Resistance2 RDS(ON)
-
Total Gate Charge2
Qg
-
Gate-Source Charge
Qgs
-
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Qgd
-
Td(on)
-
Rise Time
Tr
-
Turn-off Delay Time
Td(off)
-
Fall Time
Tf
-
-
15
VGS=4.5V, ID=6A
m
-
20
VGS=2.5V, ID=4A
25 40
ID=6A
3
-
nC VDS=16V
9
-
VGS=4.5V
11
-
VDS=15V
12
-
ID=1A
ns VGS=4.5V
47
-
RG=3.3
23
-
RD=15
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 1730 2770
VGS=0V
-
280
-
pF VDS=20V
-
240
-
f=1.0MHz
Gate Resistance
Rg
-
2.2
-
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
24
18
Max.
1.2
-
-
Unit
Test Conditions
V IS=0.84A, VGS=0V
ns IS=6A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 208к/W when mounted on Min. copper pad.
GTS9922E
Page: 2/4
 ▷