GTS9922E Datasheet, PDF (1/4 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product
ISSUED DATE :2005/10/26
REVISED DATE :2007/01/25B
GTS9922E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
20V
15m
6.8A
Description
The GTS9922E provides the designer with the best combination of fast switching, ruggedized device design,
ultra low on-resistance and cost-effectiveness.
Features
*Low on-resistance
*Capable of 2.5V gate drive
*Optimal DC/DC battery application
*Surface mount package
Package Dimensions
REF.
A
A1
b
c
D
Millimeter
Min. Max.
-
1.20
0.05
0.15
0.19
0.30
0.09
0.20
2.90
3.10
REF.
E
E1
e
L
S
Millimeter
Min. Max.
6.20
6.60
4.30
4.50
0.65 BSC
0.45
0.75
0°
8°
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
Continuous Drain Current³, V_GS@4.5V
Continuous Drain Current³, V_GS@4.5V
Pulsed Drain Current¹
Total Power Dissipation
V_GS
I_D @TA=25к
I_D @TA=70к
I_DM
P_D @TA=25к
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
20
±12
6.8
5.4
25
1
0.008
-55 ~ +150
Unit
V
V
A
A
A
W
W/к
к
Thermal Data
Parameter
Thermal Resistance Junction-ambient³
Max.
Symbol
Rthj-a
Value
125
Unit
к/W
GTS9922E
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