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GTS6923 Datasheet, PDF (2/4 Pages) GTM CORPORATION – P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET
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ISSUED DATE :2006/05/04
REVISED DATE :
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS -20
-
-
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
-0.03
-
V VGS=0, ID=-250uA
V/к Reference to 25к, ID=-1mA
Gate Threshold Voltage
Forward Transconductance
VGS(th) -0.5
-
-
gfs
-
10
-
V VDS=VGS, ID=-250uA
S VDS=-10V, ID=-3.5A
Gate-Source Leakage Current
IGSS
-
- ±100 nA VGS= ±12V
Drain-Source Leakage Current(Tj=25к)
-
-
-1
uA VDS=-20V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
-25
uA VDS=-16V, VGS=0
-
Static Drain-Source On-Resistance2 RDS(ON)
-
-
50
VGS=-4.5V, ID=-3.5A
m
-
85
VGS=-2.5V, ID=-2.7A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg
- 15.6 -
ID=-3.5A
Qgs
-
2.1
-
nC VDS=-10V
Qgd
-
5.2
-
VGS=-4.5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
-
8.2
-
-
9.4
-
- 66.4 -
-
48
-
VDS=-10V
ID=-1A
ns VGS=-4.5V
RG=3.3
RD=10
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
-
660
-
-
285
-
-
130
-
VGS=0V
pF VDS=-20V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current(Body Diode)
Symbol
VSD
IS
Min.
-
-
Typ.
-
-
Max.
-1.2
-0.83
Unit
Test Conditions
V IS=-0.83A, VGS=0V
A VD= VG=0V, VS=-1.2V
Schottky Characteristics @ Tj=25ć
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Forward Voltage Drop
Max. Reverse Leakage Current
VF
-
-
0.5
V IF=1A
IRM
-
-
100 uA VR=20V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 208к/W when mounted on Min. copper pad.
GTS6923
Page: 2/4
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