GTS6923 Datasheet, PDF (1/4 Pages) GTM CORPORATION – P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET

Pb Free Plating Product
ISSUED DATE :2006/05/04
REVISED DATE :
GTS6923
P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET
BVDSS
RDS(ON)
ID
-20V
50m
-3.5A
Description
The GTS6923 provides the designer with the best combination of fast switching, ultra low on-resistance and
cost-effectiveness.
Features
*Low on-resistance
*Fast Switch Characteristic
*Included Schottky Diode
Package Dimensions
REF.
A
A1
b
c
D
Millimeter
Min. Max.
-
1.20
0.05
0.15
0.19
0.30
0.09
0.20
2.90
3.10
REF.
E
E1
e
L
S
Millimeter
Min. Max.
6.20
6.60
4.30
4.50
0.65 BSC
0.45
0.75
0°
8°
Absolute Maximum Ratings
Parameter
Drain-Source Voltage (MOSFET and Schottky)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current³ (MOSFET)
Continuous Drain Current³ (MOSFET)
Pulsed Drain Current¹ (MOSFET)
Average Forward Current (Schottky)
Pulsed Forward Current¹ (Schottky)
Total Power Dissipation (MOSFET)
Total Power Dissipation (Schottky)
Storage Temperature Range
Operating Junction Temperature Range
Symbol
V_DS
V_KA
V_GS
I_D @Ta=25к
I_D @Ta=70к
I_DM
I_F
I_FM
P_D @Ta=25к
Tstg
Tj
Ratings
-20
20
±12
-3.5
-2.8
-30
1
25
1
1
-55 ~ +150
-55 ~ +125
Unit
V
V
V
A
A
A
A
A
W
W
к
к
Thermal Data
Parameter
Thermal Resistance Junction-ambient³ (MOSFET) Max.
Thermal Resistance Junction-ambient³ (Schottky) Max.
Symbol
Rthj-a
Value
125
Unit
к/W
GTS6923
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