English
Language : 

GS7407 Datasheet, PDF (2/4 Pages) GTM CORPORATION – P-CHANNEL ENHANCEMENT MODE POWER MOSFET
◁
ISSUED DATE :2006/08/15
REVISED DATE :
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS -20
-
-
V VGS=0, ID=-250uA
Gate Threshold Voltage
VGS(th) -0.3
-
-1.0
V VDS=VGS, ID=-250uA
Forward Transconductance
gfs
-
7
-
S VDS=-5V, ID=-3A
Gate-Source Leakage Current
IGSS
-
- ±100 nA VGS= ±8V
Drain-Source Leakage Current(Tj=25к)
-
-
-1
uA VDS=-16V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=55к)
-
-
-5
uA VDS=-16V, VGS=0
-
-
135
VGS=-4.5V, ID=-1.2A
Static Drain-Source On-Resistance RDS(ON) -
-
170 m VGS=-2.5V, ID=-1.0A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
-
-
220
VGS=-1.8V, ID=-1.0A
-
6.2
-
- 0.54 -
- 1.44 -
ID=-1.0A
nC VDS=-10V
VGS=-4.5V
-
12
-
- 10.7 -
-
74
-
- 28.7 -
VDS=-10V
ns VGS=-4.5V
RG=3
RL=15
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
-
540
-
-
72
-
-
49
-
VGS=0V
pF VDS=-10V
f=1.0MHz
Gate Resistance
Source-Drain Diode
Rg
-
12
-
f=1.0MHz
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
24.5
17.4
Max.
-1.0
-
-
Unit
Test Conditions
V IS=-1.0A, VGS=0V
ns IS=-1A, VGS=0V
nC dI/dt=100A/ s
Continuous Source Current (Body Diode)
IS
-
-
-0.6
A VD=VG=0V, VS=-1.0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on FR4 board, t Љ10sec.
GS7407
Page: 2/4
 ▷