GS7407 Datasheet, PDF (1/4 Pages) GTM CORPORATION – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product
ISSUED DATE :2006/08/15
REVISED DATE :
GS7407
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-20V
135m
-1.2A
Description
The GS7407 uses advanced trench technology to provide excellent on-resistance extremely efficient and
cost-effectiveness device. This device is suitable for use as a load switch or in PWM application.
The GS7407 is universally used for all commercial-industrial applications.
Features
* Lower Gate Charge
*Small Package Outline
*RoHS Compliant
Package Dimensions
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current^1,2
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
V_DS
V_GS
I_D @TA=25к
I_D @TA=70к
I_DM
P_D @TA=25к
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient³ Max.
Symbol
Rthj-a
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0
0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15 0.35
0.25 0.40
0.10 0.25
0.65 REF.
0.15 BSC.
Ratings
-20
±8
-1.2
-1.0
-10
0.35
0.0028
-55 ~ +150
Unit
V
V
A
A
A
W
W/к
к
Value
360
Unit
к/W
GS7407
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