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| GE730 Datasheet, PDF (2/5 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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ISSUED DATE :2005/08/30
REVISED DATE :
Electrical Characteristics(Tj = 25Ä Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS 400
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
Gate Threshold Voltage
VGS(th)
2.0
Forward Transconductance
gfs
-
Gate-Source Leakage Current
IGSS
-
Drain-Source Leakage Current(Tj=25к)
-
IDSS
Drain-Source Leakage Current(Tj=150к)
-
-
-
0.36
-
-
4.0
30
-
- Í100
-
10
-
100
V VGS=0, ID=1mA
V/к Reference to 25к, ID=1mA
V VDS=VGS, ID=250uA
S VDS=10V, ID=2.75A
nA VGS= Í30V
uA VDS=400V, VGS=0
uA VDS=320V, VGS=0
Static Drain-Source On-Resistance RDS(ON)
-
Total Gate Charge3
Qg
-
Gate-Source Charge
Qgs
-
Gate-Drain (âMillerâ) Change
Turn-on Delay Time3
Qgd
-
Td(on)
-
Rise Time
Tr
-
Turn-off Delay Time
Td(off)
-
Fall Time
Tf
-
Input Capacitance
Ciss
-
Output Capacitance
Coss
-
Reverse Transfer Capacitance
Crss
-
-
1
35
-
3.7
-
20
-
8
-
20
-
47
-
18
-
565
-
70
-
38
-
Ó¨ VGS=10V, ID=2.75A
ID=5.5A
nC VDS=320V
VGS=10V
VDD=200V
ID=5.5A
ns VGS=10V
RG=10Ó¨
RD=36Ó¨
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage3
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)1
Symbol
VSD
IS
ISM
Min.
-
-
-
Typ.
-
-
-
Max.
1.5
5.5
23
Unit
Test Conditions
V IS=5.5A, VGS=0V, Tj=25к
A VD=VG=0V, VS=1.5V
A
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25к, VDD=50V, L=15mH, RG=25 , IAS=5.5A.
3. Pulse widthÐ300us, duty cycleÐ2%.
GE730
Page: 2/5
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