GE730 Datasheet, PDF (1/5 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product
ISSUED DATE :2005/08/30
REVISED DATE :
GE730
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
400V
1.0
5.5A
Description
The GE730 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 is universally preferred for all commercial-industrial applications. The device is suited for switch
mode power supplies, DC-AC converters and high current high speed switching circuits.
Features
*Dynamic dv/dt Rating
*Repetitive Avalanche Rated
*Simple Drive Requirement
*Fast Switching
Package Dimensions
REF.
A
b
c
D
E
L4
L5
Millimeter
Min. Max.
4.40 4.80
0.76 1.00
0.36 0.50
8.60 9.00
9.80 10.4
14.7 15.3
6.20 6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min. Max.
1.25 1.45
1.17 1.47
13.25 14.25
2.54 REF.
2.60 2.89
3.71 3.96
2.60 2.80
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS@10V
Continuous Drain Current, V_GS@10V
Pulsed Drain Current¹
Total Power Dissipation
V_DS
V_GS
I_D @TC=25к
I_D @TC=100к
I_DM
P_D @TC=25к
Linear Derating Factor
Single Pulse Avalanche Energy²
E_AS
Avalanche Current
I_AR
Repetitive Avalanche Energy
E_AR
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
400
f30
5.5
3.5
23
74
0.59
260
5.5
7
-55 ~ +150
Unit
V
V
A
A
A
W
W/ć
mJ
A
mJ
ć
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
Value
1.7
62
Unit
ć/W
ć/W
GE730
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