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| G2U4407 Datasheet, PDF (2/4 Pages) GTM CORPORATION – P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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ISSUED DATE :2005/07/05
REVISED DATE :
Electrical Characteristics(Tj = 25Ä Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS -30
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
Gate Threshold Voltage
VGS(th) -1.0
Forward Transconductance
gfs
-
Gate-Source Leakage Current
IGSS
-
Drain-Source Leakage Current(Tj=25к)
-
IDSS
Drain-Source Leakage Current(Tj=150к)
-
-
-0.01
-
36
-
-
-
-
-
-3.0
-
Í100
-1
-25
V VGS=0, ID=-250uA
V/к Reference to 25к, ID=-1mA
V VDS=VGS, ID=-250uA
S VDS=-10V, ID=-24A
nA VGS= Í25V
uA VDS=-30V, VGS=0
uA VDS=-24V, VGS=0
-
Static Drain-Source On-Resistance2 RDS(ON)
-
-
14
VGS=-10V, ID=-24A
mÓ¨
-
23
VGS=-4.5V, ID=-16A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (âMillerâ) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
-
35
60
ID=-24A
-
5
-
nC VDS=-24V
-
26
-
VGS=-4.5V
-
11
-
-
64
-
-
63
-
-
100
-
VDS=-15V
ID=-24A
ns VGS=-10V
RG=3.3Ó¨
RD=0.63Ó¨
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 2120 3390
VGS=0V
-
630
-
pF VDS=-25V
-
550
-
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
39
38
Max.
-1.2
-
-
Unit
Test Conditions
V IS=-24A, VGS=0V
ns IS=-24A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by safe operating area.
2. Pulse widthÐ300us, duty cycleÐ2%.
G2U4407
Page: 2/4
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