G2U4407 Datasheet, PDF (1/4 Pages) GTM CORPORATION – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product
ISSUED DATE :2005/07/05
REVISED DATE :
G2U4407
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-30V
14m
-50A
Description
The G2U4407 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-262 package is universally preferred for all commercial-industrial applications and suited for low
voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
Package Dimensions
REF.
A
b
c
D
E
Millimeter
Min. Max.
4.40 4.80
0.76 1.00
0.36 0.50
8.60 9.00
9.80 10.4
REF.
c2
b2
L
e
L2
Millimeter
Min. Max.
1.25 1.45
1.17 1.47
13.25 14.25
2.54 REF.
1.27 REF.
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
Continuous Drain Current, V_GS@10V
Continuous Drain Current, V_GS@10V
Pulsed Drain Current¹
Total Power Dissipation
V_GS
I_D @TC=25к
I_D @TC=100к
I_DM
P_D @TC=25к
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
-30
f25
-50
-32
-180
54
0.4
-55 ~ +150
Unit
V
V
A
A
A
W
W/ć
ć
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-case
Rthj-amb
Value
2.3
62
Unit
ć/W
ć/W
G2U4407
Page: 1/4