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| G2U09N70 Datasheet, PDF (2/5 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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ISSUED DATE :2005/04/21
REVISED DATE :
Electrical Characteristics(Tj = 25Ä Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
600
-
-
V VGS=0, ID=250uA
-
Drain-Source Breakdown Voltage
BVDSS 650
-
-
V VGS=0, ID=250uA
A
700
-
-
V VGS=0, ID=250uA
H
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
0.6
-
V/к Reference to 25к, ID=1mA
Gate Threshold Voltage
VGS(th)
2.0
-
4.0
V VDS=VGS, ID=250uA
Forward Transconductance
gfs
-
4.5
-
S VDS=50V, ID=4.5A
Gate-Source Leakage Current
IGSS
-
-
Í1
uA VGS= Í20V
Drain-Source Leakage Current(Tj=25к)
-
-
100 uA VDS=600V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=150к)
-
-
500 uA VDS=480V, VGS=0
Static Drain-Source On-Resistance RDS(ON)
-
Total Gate Charge3
Qg
-
Gate-Source Charge
Qgs
-
Gate-Drain (âMillerâ) Change
Turn-on Delay Time3
Qgd
-
Td(on)
-
Rise Time
Tr
-
Turn-off Delay Time
Td(off)
-
Fall Time
Tf
-
-
0.75 Ó¨ VGS=10V, ID=4.5A
44
-
ID=9A
11
-
nC VDS=480V
12
-
VGS=10V
19
-
VDD=300V
21
-
ID=9A
ns VGS=10V
56
-
RG=10Ó¨
24
-
RD=34Ó¨
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 2660 -
-
170
-
-
10
-
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage3
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)1
Symbol
VSD
IS
ISM
Min.
-
-
-
Typ.
-
-
-
Max.
1.5
9
40
Unit
Test Conditions
V IS=9A, VGS=0V, Tj=25к
A VD= VG=0V, VS=1.5V
A
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25к, VDD=50V, L=6.8mH, RG=25Ө, IAS=9A.
3. Pulse widthÐ300us, duty cycleÐ2%.
2/5
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