G2U09N70 Datasheet, PDF (1/5 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product
ISSUED DATE :2005/04/21
REVISED DATE :
G2U09N70
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS 600/650/700V
RDS(ON)
0.75
ID
9A
Description
The G2U09N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC
converter applications. TO-262 type provide high blocking voltage to overcome voltage surge and sag in the
toughest power system with the best combination of fast switching, ruggedized design and cost-effectiveness.
The TO-262 package is universally preferred for all commercial-industrial applications. The device is suited for
switch mode power supplies, DC-AC converters and high current high speed switching circuits.
Features
*Dynamic dv/dt Rating
*Simple Drive Requirement
*Repetitive Avalanche Rated
*Fast Switching Speed
Package Dimensions
REF.
A
b
c
D
E
Millimeter
Min. Max.
4.40 4.80
0.76 1.00
0.36 0.50
8.60 9.00
9.80 10.4
REF.
c2
b2
L
e
L2
Millimeter
Min. Max.
1.25 1.45
1.17 1.47
13.25 14.25
2.54 REF.
1.27 REF.
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
- /A/H
V_DS
Gate-Source Voltage
Continuous Drain Current , V_GS@10V
V_GS
I_D @TC=25к
Continuous Drain Current , V_GS@10V
Pulsed Drain Current¹
Total Power Dissipation
I_D @TC=100к
I_DM
P_D @TC=25к
Linear Derating Factor
Single Pulse Avalanche Energy²
E_AS
Avalanche Current
I_AR
Repetitive Avalanche Energy
E_AR
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
600/650/700
f20
9
5
40
156
1.25
305
9
9
-55 ~ +150
Unit
V
V
A
A
A
W
W/ć
mJ
A
mJ
ć
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
Value
0.8
62
Unit
ć/W
ć/W
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